InSe 硒化銦晶體（Indium Selenide）

簡要描述：InSe （indium selenide） is the first commercially available InSe layered materials in the field.

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更新時間：2024-06-03
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二維材料

其他二維材料二維材料粉末二維材料溶液碲化物晶體硒化物晶體硫化物晶體絕緣體鈣鈦礦異質(zhì)結 MOFS材料二維材料薄膜黑磷六方氮化硼查看全部產(chǎn)品

詳細介紹

InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth, ii) flux zone growth, and iii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples. Flux zone technique is suitable for good crystallization but crystal sizes are limited to ~5mm. In contrast, Brigmann method offers good crystallinity as well as large size (larger than 1cm). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of InSe crystals by 2Dsemiconductors USA